硅(gui)(gui)-藍(lan)(lan)瑪(ma)瑙(nao)由多晶硅(gui)(gui)絕(jue)緣(yuan)性(xing)電(dian)(dian)(dian)阻體(ti)稀(xi)土元素組(zu)(zu)成(cheng)(cheng)(cheng)的(de)，不用生(sheng)成(cheng)(cheng)(cheng)時(shi)滯、損耗和(he)熱變形的(de)現象；藍(lan)(lan)瑪(ma)瑙(nao)有相(xiang)對(dui)好(hao)的(de)延展(zhan)性(xing)和(he)絕(jue)緣(yuan)性(xing)電(dian)(dian)(dian)阻性(xing)能指(zhi)標（1000℃以(yi)里(li)），對(dui)溫差轉變無(wu)常(chang)無(wu)常(chang)不敏(min)感(gan)度，就是在(zai)溫度過高水平下，也會良好(hao) 的(de)崗位性(xing)能指(zhi)標；藍(lan)(lan)瑪(ma)瑙(nao)的(de)抗覆(fu)蓋(gai)性(xing)能指(zhi)標較強；除此之外(wai)，硅(gui)(gui)-藍(lan)(lan)瑪(ma)瑙(nao)半導體(ti)設(she)備敏(min)感(gan)度組(zu)(zu)件(jian)，無(wu)p-n漂移，這樣(yang)，可應(ying)(ying)運于(yu)各(ge)(ge)式各(ge)(ge)樣(yang)多樣(yang)化區域環境公共場合。調節(jie)器器由雙膜(mo)片(pian)(pian)組(zu)(zu)合而成(cheng)(cheng)(cheng)：鈦硬質(zhi)各(ge)(ge)種(zhong)(zhong)(zhong)合金屬(shu)鋼(gang)(gang)測(ce)試(shi)膜(mo)片(pian)(pian)和(he)鈦硬質(zhi)各(ge)(ge)種(zhong)(zhong)(zhong)合金屬(shu)鋼(gang)(gang)收膜(mo)片(pian)(pian)。印(yin)上(shang)有異質(zhi)概念性(xing)應(ying)(ying)力敏(min)感(gan)度電(dian)(dian)(dian)橋電(dian)(dian)(dian)源線路的(de)藍(lan)(lan)瑪(ma)瑙(nao)膜(mo)片(pian)(pian)，被(bei)熔焊(han)在(zai)鈦硬質(zhi)各(ge)(ge)種(zhong)(zhong)(zhong)合金屬(shu)鋼(gang)(gang)測(ce)試(shi)膜(mo)片(pian)(pian)上(shang)。被(bei)測(ce)負(fu)壓傳輸(shu)到收膜(mo)片(pian)(pian)上(shang)。在(zai)負(fu)壓的(de)影響下，鈦硬質(zhi)各(ge)(ge)種(zhong)(zhong)(zhong)合金屬(shu)鋼(gang)(gang)收膜(mo)片(pian)(pian)生(sheng)成(cheng)(cheng)(cheng)彎曲(qu)，該(gai)彎曲(qu)被(bei)硅(gui)(gui)-藍(lan)(lan)瑪(ma)瑙(nao)敏(min)感(gan)度組(zu)(zu)件(jian)觸覺后(hou)，其電(dian)(dian)(dian)橋打印(yin)模擬(ni)輸(shu)出會生(sheng)成(cheng)(cheng)(cheng)轉變無(wu)常(chang)無(wu)常(chang)，轉變無(wu)常(chang)無(wu)常(chang)的(de)頻率與被(bei)測(ce)負(fu)壓不成(cheng)(cheng)(cheng)比(bi)例。電(dian)(dian)(dian)橋電(dian)(dian)(dian)源線路將(jiang)電(dian)(dian)(dian)橋的(de)比(bi)例失調走勢(shi)，切換為(wei)線電(dian)(dian)(dian)壓走勢(shi)打印(yin)模擬(ni)輸(shu)出。